๐๐บ๐ฝ๐ฟ๐ฒ๐๐๐ถ๐๐ฒ. ๐ช๐ถ๐ฟ๐ฒ๐ ๐๐ต๐ฎ๐ ๐ฑ๐ผ๐ปโ๐ ๐ฏ๐ฟ๐ฒ๐ฎ๐ธ. ๐ Researchers in China have developed a Metal-Polymer Conductor (MPC) by combining elastic polymers with liquid metals like gallium and indium. The result is quite remarkable. A circuit that can: โ stretch โ twist โ fold โ bend repeatedly โฆand still conduct electricity. Traditional wires fail under stress. This material behaves more like living tissue. Which opens interesting possibilities. โ wearable electronics โ soft robotics โ medical sensors โ even artificial skin Working in automation and AI, I find breakthroughs like this fascinating. Because the future of intelligent machines will not just depend on better software. It will also depend on new kinds of hardware that can move, flex, and interact safely with the human world. ๐ช๐ต๐ฒ๐ฟ๐ฒ ๐ฑ๐ผ ๐๐ผ๐ ๐๐ต๐ถ๐ป๐ธ ๐ณ๐น๐ฒ๐ ๐ถ๐ฏ๐น๐ฒ ๐ฒ๐น๐ฒ๐ฐ๐๐ฟ๐ผ๐ป๐ถ๐ฐ๐ ๐๐ถ๐น๐น ๐ต๐ฎ๐๐ฒ ๐๐ต๐ฒ ๐ฏ๐ถ๐ด๐ด๐ฒ๐๐ ๐ถ๐บ๐ฝ๐ฎ๐ฐ๐? #AI #Robotics #Innovation #FutureTech #Technology
Advanced Materials For Engineering
Explore top LinkedIn content from expert professionals.
-
-
This imec roadmap to 2039 (!) has become the chip industry's go-to. So what's actually on there? ๐ Let me walk you through it! ๐ ๐ข ๐ง๐ต๐ฒ ๐ป๐ผ๐ฑ๐ฒ๐ ๐ฎ๐ป๐ฑ ๐๐ต๐ฒ๐ถ๐ฟ ๐๐ฒ๐ฎ๐ฟ ๐ผ๐ณ ๐ถ๐ป๐๐ฟ๐ผ๐ฑ๐๐ฐ๐๐ถ๐ผ๐ปย Nodes set the tempo for innovation. They are generational markers for density, performance and power improvements. So as we exit the "N" nodes and enter the "angstrom era" (A14, A10, A7โฆ), remember: 10 angstroms = 1 nanometer. Just remember that these numbers no longer relate to anything physical on the chip. The naming is more competitive signaling between leaders like TSMC, Samsung Semiconductor and Intel. But the engineering behind each step is very real. ๐งฑ "๐๐ฒ๐๐ถ๐ฐ๐ฒ ๐ฎ๐ป๐ฑ ๐บ๐ฎ๐๐ฒ๐ฟ๐ถ๐ฎ๐น ๐ถ๐ป๐ป๐ผ๐๐ฎ๐๐ถ๐ผ๐ป๐" ๐ถ๐ ๐ฎ๐ฏ๐ผ๐๐ ๐๐ต๐ฒ ๐๐ฟ๐ฎ๐ป๐๐ถ๐๐๐ผ๐ฟ๐ New transistor architectures deliver better performance. In FinFET transistors,ย the gate wraps around the channel on three sides of a silicon fin. It was the workhorse from ~22nm. Right now, the first generation of Gate-All-Around (GAA) transistors is entering production. These stacks horizontal sheets with the gate wrapping the channel on all four sides for better control and less leakage. Next up: Complementary FET (CFET) transistors. Their taller designย stacks a pair of transistors on top of each other to essentially create two transistors in one fin. At the tail end: '2DFET' points to the use of 2D materials with atomic-scale thickness (~0.7nm) that could work where silicon can't. Deep future stuff. ๐ "๐๐ผ๐ป๐๐ถ๐ป๐๐ฒ๐ฑ ๐ฑ๐ถ๐บ๐ฒ๐ป๐๐ถ๐ผ๐ป๐ฎ๐น ๐๐ฐ๐ฎ๐น๐ถ๐ป๐ด" ๐ถ๐ ๐ฎ๐ฏ๐ผ๐๐ ๐น๐ถ๐๐ต๐ผ๐ด๐ฟ๐ฎ๐ฝ๐ต๐ย Litho enables economic scaling. ASML's Extreme ultraviolet (EUV) lithography enables today's most advanced nodes and will continue to keep the pace of chip innovation. As chip designs continue to scale and become more complex to print economically, the door to the next generation of lithography opens. We're now on the cusp of the High NA EUV era. By increasing the numerical aperture from 0.33 to 0.55, these systems bring imaging resolution down to 8nm. And an even higher numerical aperture of 0.75 would give rise to "Hyper NA" EUV systems in the 2030s. โก "๐๐ต๐ถ๐ฝ ๐ถ๐ป๐๐ฒ๐ฟ๐ฐ๐ผ๐ป๐ป๐ฒ๐ฐ๐ ๐ฎ๐ฟ๐ฐ๐ต๐ถ๐๐ฒ๐ฐ๐๐๐ฟ๐ฒ" ๐ถ๐ ๐ฎ๐ฏ๐ผ๐๐ ๐๐ต๐ฒ ๐ถ๐ป๐๐ฒ๐ด๐ฟ๐ฎ๐๐ฒ๐ฑ ๐ฐ๐ถ๐ฟ๐ฐ๐๐ถ๐๐ฟ๐ This is about the wiring. Today, power travels from the top through many wiring layers to reach transistors, wasting space and energy. Backside Power Delivery (BSPDN) flips the script: it routes power from the bottom via through-silicon vias, freeing the frontside for denser routing and better performance. Intel, TSMC and Samsung are all adopting this in their advanced nodes. But the complexity demands collaboration across deposition, etch, CMP, bonding and wafer thinning. ๐ก In the end, a roadmap like this shows that everything has to work together. No single breakthrough carries that pace of innovation. That's what makes this industry incredibly competitive and collaborative at the same time! โค๏ธ
-
๐๐ก๐ ๐๐ซ๐ญ ๐จ๐ ๐ฉ๐ซ๐๐๐ข๐ฌ๐ข๐จ๐ง ๐ข๐ง ๐ข๐ง๐๐ฎ๐ฌ๐ญ๐ซ๐ข๐๐ฅ ๐ฐ๐๐ฅ๐๐ข๐ง๐ ๐ข๐ฌ ๐ง๐จ๐ญ ๐ฃ๐ฎ๐ฌ๐ญ ๐๐๐จ๐ฎ๐ญ ๐ฃ๐จ๐ข๐ง๐ข๐ง๐ ๐ฆ๐๐ญ๐๐ฅ, ๐ข๐ญ ๐ข๐ฌ ๐๐๐จ๐ฎ๐ญ ๐๐จ๐ง๐ญ๐ซ๐จ๐ฅ๐ฅ๐๐ ๐๐๐๐ซ๐ข๐๐๐ญ๐ข๐จ๐ง, ๐ฆ๐๐ญ๐๐ฅ๐ฅ๐ฎ๐ซ๐ ๐ข๐๐๐ฅ ๐ข๐ง๐ญ๐๐ ๐ซ๐ข๐ญ๐ฒ, ๐๐ง๐ ๐๐ข๐ฆ๐๐ง๐ฌ๐ข๐จ๐ง๐๐ฅ ๐ฉ๐ซ๐๐๐ข๐ฌ๐ข๐จ๐ง. โ๏ธ๐ฅ From an expert welding and fabrication perspective, the demonstration reflects a high-control repair and alignment sequence applied in structural and heavy-duty fabrication environments where strength, accuracy, and defect rectification are critical. The intervention demonstrates how disciplined welding methodology ensures both geometric correction and long-term load performance under demanding service conditions. ๐ ๐ ๐๐๐ซ๐ข๐๐๐ญ๐ข๐จ๐ง & ๐๐ฎ๐ซ๐๐๐๐ ๐๐ซ๐๐ฉ๐๐ซ๐๐ญ๐ข๐จ๐ง: โ. Base metal cleaning and oxide removal. โ. Edge preparation and fit-up accuracy. โ. Alignment verification prior to welding. โ. Joint geometry stabilization. ๐ ๐๐๐๐ค ๐๐๐ฅ๐๐ข๐ง๐ & ๐๐๐ช๐ฎ๐๐ง๐๐ข๐ง๐ ๐๐จ๐ง๐ญ๐ซ๐จ๐ฅ: โ. Controlled tack placement strategy. โ. Distortion minimization through restraint. โ. Sequential locking of components. โ. Stress distribution balance during setup. ๐ ๐๐๐ข๐ง ๐๐๐ฅ๐๐ข๐ง๐ & ๐๐๐ฉ๐จ๐ฌ๐ข๐ญ๐ข๐จ๐ง ๐๐๐๐ก๐ง๐ข๐ช๐ฎ๐: โ. Multi-pass welding execution (SMAW/MIG/TIG). โ. Controlled heat input management. โ. Stable arc and penetration consistency. โ. Interpass temperature regulation. ๐ ๐๐ข๐ฌ๐ญ๐จ๐ซ๐ญ๐ข๐จ๐ง ๐๐จ๐ง๐ญ๐ซ๐จ๐ฅ & ๐๐ญ๐ซ๐ฎ๐๐ญ๐ฎ๐ซ๐๐ฅ ๐๐ญ๐๐๐ข๐ฅ๐ข๐ณ๐๐ญ๐ข๐จ๐ง: โ. Back-step / skip welding application. โ. Mechanical restraint using clamps/jigs. โ. Controlled thermal shrinkage balance. โ. Dimensional accuracy retention during welding. ๐ ๐๐จ๐ฌ๐ญ-๐๐๐ฅ๐ ๐ ๐ข๐ง๐ข๐ฌ๐ก๐ข๐ง๐ & ๐๐ง๐ฌ๐ฉ๐๐๐ญ๐ข๐จ๐ง: โ. Slag removal and surface cleaning. โ. Grinding for profile continuity. โ. Visual inspection of weld bead integrity. โ. NDT readiness (DPT/UT as per code). ๐ ๐๐ซ๐จ๐ฃ๐๐๐ญ ๐๐ฎ๐ญ๐๐จ๐ฆ๐: โ. Restored structural alignment and strength. โ. Enhanced joint durability under load. โ. Precision fabrication compliance achieved. โ. Welding discipline ensuring long-term performance.
-
The Future of Footwear Isnโt Manufactured โ Itโs Fabricated Around You. Would you use this one? ๐ฎ The next wave of manufacturing is emerging NOW: Global 3D-printed footwear market: $1.5B in 2024 Projected $9.1B by 2032 (CAGR 24%+) Custom-fit footwear adoption: Expected to reach 18โ22% of all athletic footwear by 2030 Returns due to sizing could drop by 65% Inventory waste down 70โ90% AI-driven design: Cuts product development time from 18 months โ 2โ6 weeks Reduces prototyping costs by up to 60% Material breakthroughs: Programmable flexible polymers that โrememberโ shape Bio-based materials with 40% lower COโ emissions High-speed resin printers now producing midsoles in under 20 minutes ๐ฃ What the โsneaker podโ symbolizes: AI biomechanics: >50,000 data points per scan Real-time fit optimization: compression, arch, pressure mapping On-demand micro-factories: 80% smaller footprint than a normal shoe line Localized production: 1 pod = 500โ700 shoes per month Zero stock model: supply chain cost reduction of up to 35% ๐ฅ The next decade will bring: Shoes that self-form and auto-tighten based on your movement Retail stores replaced by autonomous fabrication pods Hospitals generating custom orthotics in under 10 minutes Sports brands using AI motion capture + 3D print for athlete-specific gear Hyper-personalized products built directly from your biometric signature We are nearing an era where products manufacture themselves around the user. AI, robotics, and material science are converging into a new industrial model โ one where fit is perfect, waste is minimal, and every consumer becomes their own production line. The question is no longer if. Itโs who builds it first โ and how fast everyone else follows. #FutureTech #AIInnovation #AdvancedManufacturing #3DPrinting #FootwearInnovation #Biomechanics #RetailTech #SmartMaterials #TechTrends #NextGenTechnology
-
The dirty secret of Quantum Computingโฆ Materials are the limiting factor. Everyone talks about quantum algorithms, error correction, and qubit counts. But the real killer of quantum computing isnโt software, itโsย materials. Superconducting qubits donโt decohere because we lack clever code. They decohere because: โย Surface oxidesย introduce two-level system noise. โย Impurities and defectsย act like microscopic time bombs. โย Atomic-scale disorderย destroys coherence before circuits can compute anything useful. Thatโs why the biggest breakthroughs arenโt happening in code, theyโre happening inย materials labs. โ Google is building qubits withย ultra-clean Al/Si interfacesย to suppress noise. โ IBM is investing inย substrate purificationย to push coherence times further. โ Labs worldwide are chasing epitaxial aluminum films withย sub-ppm impurity levels. The โquantum revolutionโ is being held back by dirt, literally. Until we tame materials noise, scaling qubits is just scaling errors. Quantum doesnโt need another hype cycle. It needs aย materials breakthrough. #QuantumComputing #MaterialScience #GrowthAndInnovation #DeepTech
-
>>For nearly 200 years, #metals have obeyed the #Wiedemann-Franz law โ the rule that electrical conductivity and thermal conductivity always rise and fall together. But in ultra-clean #graphene, researchers at the Indian Institute of Science (IISc) [Arindam Ghosh Lab] found the opposite. ''As electrical conductivity increased, thermal conductivity dropped, shattering a principle taught in every physics textbook.'' ๐ฌ Key Findings: ๐ฃ #Quantum critical Dirac fluid realised in #graphene: Near the Dirac point (i.e. when the charge carrier density is almost zero), graphene behaves like a quantum critical fluid; both charge and heat flow are governed by universal laws rather than material-specific impurities. Nature Magazine ๐ฃUniversal (quantised) d.c. electrical #conductivity: They observe that the conductivity converges to a characteristic, quantised value in very clean graphene devices, consistent with predictions for a quantum critical point. ๐ฃ Violation of the WiedemannโFranz (WF) law: Close to the #Dirac point and at low temperatures, the #Lorentz_number (which relates thermal to electrical conductivity) exceeds the usual semiclassical value by over 200ร. This shows that heat and charge transport are decoupled in remarkable ways under these conditions. ๐ฃEffective viscosity nearing minimal quantum limit: At higher #temperatures, the ratio of dynamic viscosity to entropy density in the cleanest devices comes close (within a factor of ~4) to the lower bound predicted for minimally viscous quantum fluids. This suggests grapheneโs electron fluid is behaving almost like a โperfectโ fluid in relativistic hydrodynamics. ๐ง #Why_It_Matters 1.) Provides experimental evidence for theoretical predictions about quantum criticality in Dirac materials, showing universal #transport behavior in both charge and heat channels. 2.) Deepens understanding of hydrodynamic electron flow in 2D materials- essential for next-generation electron devices where interactions, rather than scattering off impurities, dominate. 3.) Challenges traditional transport paradigms (like the WF law), which assume that electronsโ abilities to carry heat and charge are tightly linked โ here, they are not. ๐ฏ #Implications_and_Further_Directions > Potential for exploiting quantum critical behavior in designing low-dissipation electronics, thermal management, or novel sensors. > Opens up further experimental/theoretical work in exploring other #materials or regimes (e.g. stronger interactions, different dimensionalities, non-linear responses) to test universality. > Could have connections to high energy physics concepts (relativistic hydrodynamics, minimal viscosity bounds) being realised in a solid-state platform. #FUll paper : https://lnkd.in/gh-Nis8D #solidstatephysics #electricalconduction #graphene